ROHM RH7G04BBJFRAT Type P-Channel Single MOSFETs, -40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04BBJFRATCB
- RS stock no.:
- 687-447
- Mfr. Part No.:
- RH7G04BBJFRATCB
- Manufacturer:
- ROHM
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Bulk discount available
Subtotal (1 tape of 2 units)*
R 41,00
(exc. VAT)
R 47,16
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 100 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | R 20.50 | R 41.00 |
| 20 - 48 | R 19.99 | R 39.98 |
| 50 - 198 | R 19.39 | R 38.78 |
| 200 - 998 | R 18.615 | R 37.23 |
| 1000 + | R 17.87 | R 35.74 |
*price indicative
- RS stock no.:
- 687-447
- Mfr. Part No.:
- RH7G04BBJFRATCB
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | DFN3333T8LSAB | |
| Series | RH7G04BBJFRAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.4mm | |
| Width | 3.4 mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type DFN3333T8LSAB | ||
Series RH7G04BBJFRAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.4mm | ||
Width 3.4 mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET is engineered for robust performance in demanding applications, offering exceptional efficiency and reliability. With a maximum Drain-Source voltage of -40V and continuous drain current capabilities reaching up to 40A, this component excels in power management. Its low on-state resistance of just 11.9mΩ enhances energy efficiency, making it an ideal choice for automotive and industrial systems. Designed to withstand temperatures from -55 to 175°C, this MOSFET ensures durability and stability under a wide range of conditions, while its AEC-Q101 qualification signals its suitability for automotive environments, contributing to enhanced device safety and efficacy.
AEC Q101 qualified for reliable automotive applications
100% avalanche tested for enhanced safety under extreme conditions
Low thermal resistance junction-case, promoting efficient heat dissipation
Wide operating temperature range ensures performance stability in harsh environments
Minimal on-state resistance optimises energy efficiency, reducing overall power loss
Capacitive characteristics tailored for fast switching applications, enhancing performance
Wettable flanks design facilitates reliable soldering and improved assembly quality
Suitability for various applications, including ADAS, lighting, and body control systems
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