Vishay SQ2389CES Type P-Channel Single MOSFETs, -4.1 A, -40 V Enhancement, 3-Pin SOT-23
- RS stock no.:
- 653-160
- Mfr. Part No.:
- SQ2389CES-T1_GE3
- Manufacturer:
- Vishay
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*price indicative
- RS stock no.:
- 653-160
- Mfr. Part No.:
- SQ2389CES-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -4.1A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | SQ2389CES | |
| Package Type | SOT-23 | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.094Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 3W | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 3.04mm | |
| Width | 2.64mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -4.1A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series SQ2389CES | ||
Package Type SOT-23 | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.094Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 3W | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 3.04mm | ||
Width 2.64mm | ||
Automotive Standard AEC-Q101 | ||
Vishay SQ2389CES Series Single MOSFETs, -40V Maximum Drain Source Voltage, -4.1A Maximum Continuous Drain Current - SQ2389CES-T1_GE3
This single MOSFETs device is a P‑channel enhancement‑mode transistor designed for use on printed circuit boards in automotive and industrial control environments. It provides high‑temperature operation and low forward voltage for switching and protection roles within systems that require Compact SOT‑23 packaging and automotive‑grade robustness.
Features and Benefits:
• -40V rating enables handling of moderate negative rail voltages for switching
• 0.094 Ω RDS(on) minimises conduction losses during load operation
• -4.1 A continuous drain current supports moderate power loads on PCBs
• 12 nC typical gate charge reduces drive energy for Faster switching
• 3W power dissipation allows sustained operation at elevated power levels
• -55 °C to 175 °C range suits extended thermal environments
• 0.094 Ω RDS(on) minimises conduction losses during load operation
• -4.1 A continuous drain current supports moderate power loads on PCBs
• 12 nC typical gate charge reduces drive energy for Faster switching
• 3W power dissipation allows sustained operation at elevated power levels
• -55 °C to 175 °C range suits extended thermal environments
Applications
• Suitable for high‑side switching in automotive electronic modules
• Ideal for load protection in battery management systems
• Used for reverse‑polarity protection in vehicle electronics
• Can be used for power switching in industrial automation controllers
• Ideal for load protection in battery management systems
• Used for reverse‑polarity protection in vehicle electronics
• Can be used for power switching in industrial automation controllers
What package should I plan for on the PCB footprint?
The device comes in a three‑lead SOT‑23 package, requiring a small surface‑mount footprint compatible with standard SOT‑23 land patterns.
How does gate drive voltage influence use in systems?
The gate may be driven up to 20 V
ensure gate‑source excursions remain within that limit to avoid device stress.
What thermal considerations apply for sustained operation?
With a maximum junction temperature of 175 °C and 3W dissipation, thermal management such as copper pours or heatsinking is recommended for continuous high‑power use.
Can it meet automotive environmental demands?
It is qualified to AEC‑Q101 stress tests and is RoHS‑compliant, aligning with automotive component requirements.
What are the expected switching characteristics?
Typical gate charge of 12 nC indicates a modest charge requirement, supporting relatively low driving energy for switching transitions.
Related links
- Vishay SQ2389CES Type P-Channel Single MOSFETs -40 V Enhancement, 3-Pin SOT-23 SQ2389CES-T1_GE3
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