Vishay SISS5812DN Type N-Channel Single MOSFETs, 42.8 A, 80 V Enhancement, 8-Pin PowerPAK SISS5812DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

R 25 482,00

(exc. VAT)

R 29 304,00

(inc. VAT)

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Per Reel*
3000 +R 8.494R 25,482.00

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RS stock no.:
653-132
Mfr. Part No.:
SISS5812DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

42.8A

Maximum Drain Source Voltage Vds

80V

Series

SISS5812DN

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0135Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

44.6W

Typical Gate Charge Qg @ Vgs

10nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.83mm

Length

3.40mm

Standards/Approvals

No

Width

3.40 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay TrenchFET Gen V N-Channel Power MOSFET rated for 80 V drain-source voltage. Packaged in a Compact PowerPAK 1212-8S, it's Ideal for AI server power solutions, DC/DC converters, and load switching.

Pb Free

Halogen free

RoHS compliant

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