Vishay SIRA10DDP Type N-Channel Single MOSFETs, 96 A, 30 V Enhancement, 8-Pin PowerPAK

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Subtotal (1 tape of 1 unit)*

R 7,98

(exc. VAT)

R 9,18

(inc. VAT)

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1 - 24R 7.98
25 - 99R 7.78
100 - 499R 7.55
500 - 999R 7.25
1000 +R 6.96

*price indicative

RS stock no.:
653-142
Mfr. Part No.:
SIRA10DDP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

96A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK

Series

SIRA10DDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0031Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

24nC

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

43W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.04mm

Length

5.15mm

Width

6.15 mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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