Vishay SIRA12DDP Type N-Channel Single MOSFETs, 81 A, 30 V Enhancement, 8-Pin PowerPAK

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Subtotal (1 tape of 1 unit)*

R 7,28

(exc. VAT)

R 8,37

(inc. VAT)

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1 - 24R 7.28
25 - 99R 7.10
100 - 499R 6.89
500 - 999R 6.61
1000 +R 6.35

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RS stock no.:
653-145
Mfr. Part No.:
SIRA12DDP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

30V

Series

SIRA12DDP

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0036Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

38W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

9.2nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.15mm

Height

1.04mm

Width

6.15 mm

Automotive Standard

No

COO (Country of Origin):
TH
The Vishay N-channel MOSFET optimized for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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