DiodesZetex Type N-Channel MOSFET, 600 mA, 60 V Enhancement, 3-Pin TO-92 ZVN4206AVSTZ
- RS stock no.:
- 823-1827
- Mfr. Part No.:
- ZVN4206AVSTZ
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 245,54
(exc. VAT)
R 282,38
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 40 unit(s) ready to ship from another location
- Plus 3,040 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 12.277 | R 245.54 |
| 100 - 180 | R 11.97 | R 239.40 |
| 200 - 980 | R 11.611 | R 232.22 |
| 1000 - 1980 | R 11.146 | R 222.92 |
| 2000 + | R 10.70 | R 214.00 |
*price indicative
- RS stock no.:
- 823-1827
- Mfr. Part No.:
- ZVN4206AVSTZ
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 700mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.41 mm | |
| Length | 4.77mm | |
| Height | 4.01mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 700mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Width 2.41 mm | ||
Length 4.77mm | ||
Height 4.01mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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