Microchip 2N7002 Type N-Channel Single MOSFETs, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002-G
- RS stock no.:
- 644-261
- Mfr. Part No.:
- 2N7002-G
- Manufacturer:
- Microchip
Image representative of range
Bulk discount available
Subtotal (1 tape of 10 units)*
R 82,41
(exc. VAT)
R 94,77
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,560 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | R 8.241 | R 82.41 |
| 100 - 490 | R 8.035 | R 80.35 |
| 500 - 990 | R 7.794 | R 77.94 |
| 1000 + | R 7.482 | R 74.82 |
*price indicative
- RS stock no.:
- 644-261
- Mfr. Part No.:
- 2N7002-G
- Manufacturer:
- Microchip
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7002 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.36W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Length | 2.9mm | |
| Height | 1.12mm | |
| Width | 1.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7002 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.36W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Length 2.9mm | ||
Height 1.12mm | ||
Width 1.3 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Microchip N-Channel a low-threshold, Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Free from Secondary Breakdown
Low Power Drive Requirement
Ease of Paralleling
Related links
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-23 2N7002
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-23 2N7002-7-F
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-23 2N7002LT1G
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-23 2N7002LT3G
- onsemi Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 2N7002DW
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-523 2N7002T
- Diodes Inc Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 DMN66D0LDW-7
- Diodes Inc Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 2N7002DW-7-F