Microchip TN0106 Type N-Channel Single MOSFETs, 3.4 A, 60 V Enhancement, 3-Pin TO-92 TN0106N3-G
- RS stock no.:
- 598-395
- Mfr. Part No.:
- TN0106N3-G
- Manufacturer:
- Microchip
Subtotal (1 bag of 1000 units)*
R 14 176,00
(exc. VAT)
R 16 302,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
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- Shipping from 02 February 2026
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Units | Per unit | Per Bag* |
|---|---|---|
| 1000 + | R 14.176 | R 14,176.00 |
*price indicative
- RS stock no.:
- 598-395
- Mfr. Part No.:
- TN0106N3-G
- Manufacturer:
- Microchip
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TN0106 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | RoHS | |
| Length | 0.205in | |
| Width | 0.165 in | |
| Height | 0.82in | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TN0106 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals RoHS | ||
Length 0.205in | ||
Width 0.165 in | ||
Height 0.82in | ||
Automotive Standard No | ||
The Microchip N Channel Enhancement-Mode Vertical low-threshold transistor is built using a vertical DMOS structure and a well-established silicon-gate manufacturing process. This design combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. Like all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Related links
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