Infineon IPT Type N-Channel MOSFET, 87 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT129N20NM6ATMA1
- RS stock no.:
- 349-132
- Mfr. Part No.:
- IPT129N20NM6ATMA1
- Manufacturer:
- Infineon
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View bulk pricing optionSubtotal (1 unit)*
R 132,62
(exc. VAT)
R 152,51
(inc. VAT)
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In Stock
- 1,990 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | R 132.62 |
| 10 - 99 | R 129.30 |
| 100 - 499 | R 125.42 |
| 500 - 999 | R 120.40 |
| 1000 + | R 115.58 |
*price indicative
- RS stock no.:
- 349-132
- Mfr. Part No.:
- IPT129N20NM6ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 234W | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 234W | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), minimizing conduction losses. The excellent gate charge x RDS(on) product (FOM) ensures superior switching performance, while the very low reverse recovery charge (Qrr) contributes to efficient operation. With a high avalanche energy rating, it offers enhanced robustness, and it is capable of operating at 175°C, making it reliable even in harsh environments.
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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