Infineon IPT Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1
- RS stock no.:
- 349-260
- Mfr. Part No.:
- IPT60T022S7XTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
R 260,34
(exc. VAT)
R 299,39
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | R 260.34 |
| 10 - 99 | R 253.83 |
| 100 + | R 246.22 |
*price indicative
- RS stock no.:
- 349-260
- Mfr. Part No.:
- IPT60T022S7XTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 390W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC, JS-001, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 390W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC, JS-001, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS S7 boasts the lowest Rdson values for an HV SJ MOSFET, with a distinctive increase in energy efficiency. The embedded Temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7 is optimized for static switching and high current applications. It is an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS and inverter topologies. The new temperature sensor enhances S7 features, allowing the best possible utilization of the power transistor.
CoolMOS S7 technology enables lowest RDS(on) in the smallest footprint
Optimized price performance in low frequency switching applications
High pulse current capability
Seamless diagnostics at the lowest system
Temperature sense feature for protection and optimized thermal device utilization
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