Infineon OptiMOS 5 N-Channel MOSFET, 445 A, 60 V, 9-Pin PG-WHTFN-9 IQD009N06NM5CGSCATMA1

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Subtotal (1 pack of 2 units)*

R 363,69

(exc. VAT)

R 418,244

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18R 181.845R 363.69
20 - 198R 177.30R 354.60
200 - 998R 171.98R 343.96
1000 - 1998R 165.10R 330.20
2000 +R 158.495R 316.99

*price indicative

RS stock no.:
348-880
Mfr. Part No.:
IQD009N06NM5CGSCATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

445 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS 5

Package Type

PG-WHTFN-9

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
MY
The Infineon Power MOSFET comes with a low RDS(on) of 0.9 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.

Minimized conduction losses
Fast switching
Reduced voltage overshoot

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