Infineon OptiMOS 5 N-Channel MOSFET, 323 A, 80 V, 9-Pin PG-WHTFN-9 IQD016N08NM5CGSCATMA1

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Subtotal (1 pack of 2 units)*

R 367,80

(exc. VAT)

R 422,96

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18R 183.90R 367.80
20 - 198R 179.305R 358.61
200 - 998R 173.925R 347.85
1000 - 1998R 166.97R 333.94
2000 +R 160.29R 320.58

*price indicative

RS stock no.:
348-883
Mfr. Part No.:
IQD016N08NM5CGSCATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

323 A

Maximum Drain Source Voltage

80 V

Package Type

PG-WHTFN-9

Series

OptiMOS 5

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
MY
The Infineon Power MOSFET comes with a low RDS(on) of 1,57 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.

Minimized conduction losses
Fast switching
Reduced voltage overshoot

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