Infineon OptiMOS 5 N-Channel MOSFET, 700 A, 30 V Enhancement, 9-Pin PG-WHTFN-9 IQDH35N03LM5CGSCATMA1
- RS stock no.:
- 348-875
- Mfr. Part No.:
- IQDH35N03LM5CGSCATMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (2 units, in packs of 2)*
R 325,93
(exc. VAT)
R 374,82
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 162.965 | R 325.93 |
| 20 - 198 | R 158.89 | R 317.78 |
| 200 - 998 | R 154.125 | R 308.25 |
| 1000 - 1998 | R 147.96 | R 295.92 |
| 2000 + | R 142.04 | R 284.08 |
*price indicative
- RS stock no.:
- 348-875
- Mfr. Part No.:
- IQDH35N03LM5CGSCATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 700A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS 5 | |
| Package Type | PG-WHTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.35mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 700A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS 5 | ||
Package Type PG-WHTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.35mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon MOSFET comes with a low RDS(on) of 0.35 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.
Minimized conduction losses
Fast switching
Reduced voltage overshoot
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