onsemi NVH Type N-Channel MOSFET, 50 A, 650 V N, 4-Pin TO-247-4L NVH4L032N065M3S
- RS stock no.:
- 327-808
- Mfr. Part No.:
- NVH4L032N065M3S
- Manufacturer:
- onsemi
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Subtotal (1 unit)*
R 251,08
(exc. VAT)
R 288,74
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | R 251.08 |
| 10 - 99 | R 244.80 |
| 100 - 499 | R 237.46 |
| 500 - 999 | R 227.96 |
| 1000 + | R 218.84 |
*price indicative
- RS stock no.:
- 327-808
- Mfr. Part No.:
- NVH4L032N065M3S
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247-4L | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.5V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Power Dissipation Pd | 187W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, RoHS 7a | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247-4L | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.5V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Power Dissipation Pd 187W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, RoHS 7a | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Silicon Carbide (SiC) MOSFET, EliteSiC, is a 650 V, 32 mΩ device in the M3S TO-247-4L package. It is engineered for high-performance power applications, offering low on-resistance and excellent switching capabilities. This device is ideal for use in high-efficiency power conversion systems, including automotive, industrial, and renewable energy applications.
Devices are Pb Free and are RoHS Compliant
Qualified for Automotive According to AEC Q101
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