onsemi NVH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L080N120SC1
- RS stock no.:
- 202-5740
- Mfr. Part No.:
- NVH4L080N120SC1
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 299,53
(exc. VAT)
R 344,46
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 410 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 149.765 | R 299.53 |
| 50 - 98 | R 146.02 | R 292.04 |
| 100 - 198 | R 141.64 | R 283.28 |
| 200 + | R 135.975 | R 271.95 |
*price indicative
- RS stock no.:
- 202-5740
- Mfr. Part No.:
- NVH4L080N120SC1
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 170W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Width | 5.2 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 170W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 22.74mm | ||
Length 15.8mm | ||
Width 5.2 mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 80 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter, Automotive Auxiliary Motor Drive applications.
AEC Q101 qualified
100% avalanche tested
Low effective output capacitance
RoHS compliant
Related links
- onsemi NVH SiC N-Channel MOSFET Transistor 1200 V, 4-Pin TO-247-4 NVH4L080N120SC1
- onsemi NVH SiC N-Channel MOSFET Transistor 1200 V, 4-Pin TO-247-4 NVH4L040N120SC1
- onsemi NVH SiC N-Channel MOSFET Transistor 1200 V, 4-Pin TO-247-4 NVHL160N120SC1
- onsemi NVH SiC N-Channel MOSFET Transistor 1200 V, 4-Pin TO-247-4 NVH4L020N120SC1
- onsemi NVH SiC N-Channel MOSFET Transistor 1200 V, 4-Pin TO-247-4 NVH4L160N120SC1
- onsemi NVH SiC N-Channel MOSFET Transistor 1200 V, 3-Pin TO-247 NVHL040N120SC1
- onsemi NTH SiC N-Channel MOSFET Transistor 1200 V, 4-Pin TO-247-4 NTH4L080N120SC1
- onsemi NVH SiC N-Channel MOSFET 650 V, 4-Pin TO-247-4L NVH4L023N065M3S