Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1
- RS stock no.:
- 284-758
- Mfr. Part No.:
- IQE030N06NM5CGSCATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 235,81
(exc. VAT)
R 271,18
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 100 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 47.162 | R 235.81 |
| 50 - 95 | R 45.982 | R 229.91 |
| 100 - 495 | R 44.602 | R 223.01 |
| 500 - 995 | R 42.818 | R 214.09 |
| 1000 + | R 41.106 | R 205.53 |
*price indicative
- RS stock no.:
- 284-758
- Mfr. Part No.:
- IQE030N06NM5CGSCATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 132A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-WHTFN-9 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, RoHS, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 132A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-WHTFN-9 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon MOSFET is a power transistor exemplifies cutting edge technology and performance, designed for efficient operation in demanding applications. Optimised for synchronous rectification, it assures superior thermal management and reliability, making it an Ideal choice for various industrial uses. Built around the OptiMOS 5 platform, it is tailored to operate effectively within a 60V range while maintaining a Compact footprint. Its robust design facilitates efficient switching, ensuring high performance while minimising losses.
Superior thermal resistance for reliability
Pb free plating for environmental compliance
100% avalanche testing for performance assurance
Exceptional gate charge for switching efficiency
Complies with halogen free standards
Ideal for rigorous industrial applications
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