Infineon IQD0 Type N-Channel MOSFET, 276 A, 100 V Enhancement, 9-Pin PG-WHTFN-9 IQD020N10NM5CGSCATMA1
- RS stock no.:
- 351-909
- Mfr. Part No.:
- IQD020N10NM5CGSCATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
R 210,18
(exc. VAT)
R 241,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 105.09 | R 210.18 |
| 20 - 198 | R 102.465 | R 204.93 |
| 200 - 998 | R 99.39 | R 198.78 |
| 1000 - 1998 | R 95.415 | R 190.83 |
| 2000 + | R 91.60 | R 183.20 |
*price indicative
- RS stock no.:
- 351-909
- Mfr. Part No.:
- IQD020N10NM5CGSCATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 276A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-WHTFN-9 | |
| Series | IQD0 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 2.05mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 333W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 107nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified | |
| Height | 0.75mm | |
| Length | 5mm | |
| Width | 6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 276A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-WHTFN-9 | ||
Series IQD0 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 2.05mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 333W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 107nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified | ||
Height 0.75mm | ||
Length 5mm | ||
Width 6 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon Power MOSFET comes with a low RDS(on) of 2,05 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.
Cutting edge 100 V silicon technology
Outstanding FOMs
Improved thermal performance
Ultra-low parasitic
Maximized chip or package ratio
Center-Gate footprint
Industry-standard package
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