ROHM RH6 1 Type N-Channel MOSFET, 65 A, 60 V Enhancement, 8-Pin HSMT-8 RH6L040BGTB1
- RS stock no.:
- 264-934
- Mfr. Part No.:
- RH6L040BGTB1
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 tape of 10 units)*
R 160,76
(exc. VAT)
R 184,87
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 3,020 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | R 16.076 | R 160.76 |
| 100 - 240 | R 15.674 | R 156.74 |
| 250 - 490 | R 15.204 | R 152.04 |
| 500 - 990 | R 14.596 | R 145.96 |
| 1000 + | R 14.012 | R 140.12 |
*price indicative
- RS stock no.:
- 264-934
- Mfr. Part No.:
- RH6L040BGTB1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | HSMT-8 | |
| Series | RH6 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 59W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18.8nC | |
| Maximum Operating Temperature | 150°C | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type HSMT-8 | ||
Series RH6 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 59W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18.8nC | ||
Maximum Operating Temperature 150°C | ||
Number of Elements per Chip 1 | ||
The ROHM Nch 60V 65A HSMT8 is a power MOSFET with low on resistance, suitable for switching, motor drives, DC or DC converters.
Small Surface Mount Package
Pb-free plating
RoHS compliant
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