ROHM HT8K 2 Type N-Channel MOSFET, 13 A, 100 V Enhancement, 8-Pin HSMT-8 HT8KE6TB1

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Subtotal (1 tape of 10 units)*

R 160,79

(exc. VAT)

R 184,91

(inc. VAT)

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Units
Per unit
Per Tape*
10 - 90R 16.079R 160.79
100 - 240R 15.677R 156.77
250 - 490R 15.207R 152.07
500 - 990R 14.599R 145.99
1000 +R 14.015R 140.15

*price indicative

Packaging Options:
RS stock no.:
264-876
Mfr. Part No.:
HT8KE6TB1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

100V

Package Type

HSMT-8

Series

HT8K

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

57mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

14W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.7nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The ROHM power MOSFET features a dual N-channel configuration with a voltage rating of 100V and a current capacity of 13A. Designed in an HSOP8 package and offers low on-resistance.

Low on-resistance

Small Surface Mount Package (HSOP8)

Pb-free lead plating and RoHS compliant

Halogen Free

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