ROHM HT8K 2 Type N-Channel MOSFET, 7 A, 100 V Enhancement, 8-Pin HSMT-8 HT8KE5TB1
- RS stock no.:
- 264-874
- Mfr. Part No.:
- HT8KE5TB1
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 tape of 10 units)*
R 101,48
(exc. VAT)
R 116,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 100 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | R 10.148 | R 101.48 |
| 100 - 240 | R 9.894 | R 98.94 |
| 250 - 490 | R 9.597 | R 95.97 |
| 500 - 990 | R 9.213 | R 92.13 |
| 1000 + | R 8.844 | R 88.44 |
*price indicative
- RS stock no.:
- 264-874
- Mfr. Part No.:
- HT8KE5TB1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HT8K | |
| Package Type | HSMT-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 193mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 13W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HT8K | ||
Package Type HSMT-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 193mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 13W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM power MOSFET features a dual N-channel configuration with a voltage rating of 100V and a current capacity of 7A. Designed in an HSOP8 package and offers low on-resistance.
Low on-resistance
Small Surface Mount Package (HSOP8)
Pb-free lead plating and RoHS compliant
Halogen Free
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