onsemi NTMFS N-Channel MOSFET, 414 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS0D5N04XMT1G
- RS stock no.:
- 220-589
- Mfr. Part No.:
- NTMFS0D5N04XMT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 5 units)*
R 365,81
(exc. VAT)
R 420,68
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,500 unit(s) shipping from 25 August 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | R 73.162 | R 365.81 |
| 50 - 95 | R 71.332 | R 356.66 |
| 100 - 495 | R 69.192 | R 345.96 |
| 500 - 995 | R 66.424 | R 332.12 |
| 1000 + | R 63.768 | R 318.84 |
*price indicative
- RS stock no.:
- 220-589
- Mfr. Part No.:
- NTMFS0D5N04XMT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 414A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN-5 | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.52mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 97.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 163W | |
| Forward Voltage Vf | 800mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Width | 6mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 414A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN-5 | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.52mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 97.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 163W | ||
Forward Voltage Vf 800mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Width 6mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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