onsemi NTMFS Type N-Channel MOSFET, 233 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS1D1N04XMT1G
- RS stock no.:
- 220-597
- Mfr. Part No.:
- NTMFS1D1N04XMT1G
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tape of 10 units)*
R 356,78
(exc. VAT)
R 410,30
(inc. VAT)
Add 50 units to get free delivery
Temporarily out of stock
- Shipping from 28 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | R 35.678 | R 356.78 |
| 100 - 240 | R 34.786 | R 347.86 |
| 250 - 490 | R 33.742 | R 337.42 |
| 500 - 990 | R 32.392 | R 323.92 |
| 1000 + | R 31.096 | R 310.96 |
*price indicative
- RS stock no.:
- 220-597
- Mfr. Part No.:
- NTMFS1D1N04XMT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 233A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMFS | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 49.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 1mm | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 233A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMFS | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 49.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 1mm | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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