onsemi NTMFS Type N-Channel MOSFET, 509 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS0D4N04XMT1G
- RS stock no.:
- 220-587
- Mfr. Part No.:
- NTMFS0D4N04XMT1G
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tape of 2 units)*
R 142,64
(exc. VAT)
R 164,04
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 03 September 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | R 71.32 | R 142.64 |
| 20 - 198 | R 69.535 | R 139.07 |
| 200 - 998 | R 67.45 | R 134.90 |
| 1000 - 1998 | R 64.75 | R 129.50 |
| 2000 + | R 62.16 | R 124.32 |
*price indicative
- RS stock no.:
- 220-587
- Mfr. Part No.:
- NTMFS0D4N04XMT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 509A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMFS | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.42mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 197W | |
| Typical Gate Charge Qg @ Vgs | 133nC | |
| Forward Voltage Vf | 0.79V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.9 mm | |
| Length | 5mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 509A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMFS | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.42mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 197W | ||
Typical Gate Charge Qg @ Vgs 133nC | ||
Forward Voltage Vf 0.79V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 5.9 mm | ||
Length 5mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Height 1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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