STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG
- RS stock no.:
- 215-219
- Mfr. Part No.:
- SCT012H90G3AG
- Manufacturer:
- STMicroelectronics
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Subtotal (1 reel of 1000 units)*
R 903 302,00
(exc. VAT)
R 1 038 797,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,000 unit(s) shipping from 26 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | R 903.302 | R 903,302.00 |
*price indicative
- RS stock no.:
- 215-219
- Mfr. Part No.:
- SCT012H90G3AG
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | H2PAK-7 | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 625W | |
| Typical Gate Charge Qg @ Vgs | 138nC | |
| Forward Voltage Vf | 2.8V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.25mm | |
| Width | 10.4 mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Height | 4.8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type H2PAK-7 | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 625W | ||
Typical Gate Charge Qg @ Vgs 138nC | ||
Forward Voltage Vf 2.8V | ||
Maximum Operating Temperature 175°C | ||
Length 15.25mm | ||
Width 10.4 mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Height 4.8mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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