Dual N/P-Channel-Channel MOSFET, 7 A, 8.5 A, 30 V, 8-Pin SOIC Diodes Inc DMC3021LSD-13
- RS stock no.:
- 751-4067
- Mfr. Part No.:
- DMC3021LSD-13
- Manufacturer:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 25 units)**
R 195 15
(exc. VAT)
R 224 43
(inc. VAT)
75 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
---|---|---|
25 - 100 | R 7,806 | R 195,15 |
125 - 600 | R 7,611 | R 190,275 |
625 - 1225 | R 7,382 | R 184,55 |
1250 - 2475 | R 7,087 | R 177,175 |
2500 + | R 6,804 | R 170,10 |
**price indicative
- RS stock no.:
- 751-4067
- Mfr. Part No.:
- DMC3021LSD-13
- Manufacturer:
- DiodesZetex
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | DiodesZetex | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 7 A, 8.5 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 32 mΩ, 53 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.2V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 2 | |
Length | 4.95mm | |
Width | 3.95mm | |
Typical Gate Charge @ Vgs | 16.1 nC @ 10 V, 21.1 nC @ 4.5 V | |
Minimum Operating Temperature | -55 °C | |
Height | 1.5mm | |
Select all | ||
---|---|---|
Manufacturer DiodesZetex | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 7 A, 8.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 32 mΩ, 53 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Length 4.95mm | ||
Width 3.95mm | ||
Typical Gate Charge @ Vgs 16.1 nC @ 10 V, 21.1 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
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