IXYS HiperFET, Polar Type N-Channel MOSFET, 36 A, 600 V Enhancement, 3-Pin TO-247 IXFH36N60P
- RS stock no.:
- 194-467
- Distrelec Article No.:
- 302-53-323
- Mfr. Part No.:
- IXFH36N60P
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 234,87
(exc. VAT)
R 270,10
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 16 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | R 234.87 |
| 25 - 99 | R 229.00 |
| 100 - 249 | R 222.13 |
| 250 - 499 | R 213.24 |
| 500 + | R 204.71 |
*price indicative
- RS stock no.:
- 194-467
- Distrelec Article No.:
- 302-53-323
- Mfr. Part No.:
- IXFH36N60P
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | HiperFET, Polar | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 650W | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.3 mm | |
| Height | 21.46mm | |
| Standards/Approvals | No | |
| Length | 16.26mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series HiperFET, Polar | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 650W | ||
Maximum Operating Temperature 150°C | ||
Width 5.3 mm | ||
Height 21.46mm | ||
Standards/Approvals No | ||
Length 16.26mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247 IXFH36N50P
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-220
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-220 IXTP36N30P
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247