IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 1200 V Enhancement, 3-Pin TO-264
- RS stock no.:
- 920-0877
- Mfr. Part No.:
- IXFK26N120P
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 25 units)*
R 11 275,90
(exc. VAT)
R 12 967,275
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 25 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | R 451.036 | R 11,275.90 |
| 50 - 75 | R 439.76 | R 10,994.00 |
| 100 - 225 | R 426.567 | R 10,664.18 |
| 250 - 475 | R 409.504 | R 10,237.60 |
| 500 + | R 393.124 | R 9,828.10 |
*price indicative
- RS stock no.:
- 920-0877
- Mfr. Part No.:
- IXFK26N120P
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-264 | |
| Series | HiperFET, Polar | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 460mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 960W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 225nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.13mm | |
| Length | 19.96mm | |
| Height | 26.16mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-264 | ||
Series HiperFET, Polar | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 460mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 960W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 225nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Width 5.13mm | ||
Length 19.96mm | ||
Height 26.16mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS