IXYS HiperFET, Polar N-Channel MOSFET, 170 A, 100 V Enhancement, 3-Pin TO-247 IXFH170N10P
- RS stock no.:
- 193-509
- Distrelec Article No.:
- 302-53-310
- Mfr. Part No.:
- IXFH170N10P
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
R 231,07
(exc. VAT)
R 265,73
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 244 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | R 231.07 |
| 25 - 99 | R 225.29 |
| 100 - 249 | R 218.53 |
| 250 - 499 | R 209.79 |
| 500 + | R 201.40 |
*price indicative
- RS stock no.:
- 193-509
- Distrelec Article No.:
- 302-53-310
- Mfr. Part No.:
- IXFH170N10P
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HiperFET, Polar | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 714W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 198nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.26mm | |
| Width | 5.3mm | |
| Standards/Approvals | No | |
| Height | 21.46mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HiperFET, Polar | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 714W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 198nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 16.26mm | ||
Width 5.3mm | ||
Standards/Approvals No | ||
Height 21.46mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS