Infineon OptiMOS Type N-Channel MOSFET, 190 mA, 100 V Enhancement, 3-Pin SOT-23
- RS stock no.:
- 826-9317
- Mfr. Part No.:
- BSS123NH6433XTMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 500 units)*
R 796,50
(exc. VAT)
R 916,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 6,000 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 500 - 500 | R 1.593 | R 796.50 |
| 1000 - 2000 | R 1.554 | R 777.00 |
| 2500 - 4500 | R 1.507 | R 753.50 |
| 5000 - 9500 | R 1.447 | R 723.50 |
| 10000 + | R 1.389 | R 694.50 |
*price indicative
- RS stock no.:
- 826-9317
- Mfr. Part No.:
- BSS123NH6433XTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 190mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 500mW | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.3 mm | |
| Distrelec Product Id | 304-44-423 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 190mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 500mW | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.3 mm | ||
Distrelec Product Id 304-44-423 | ||
Automotive Standard AEC-Q101 | ||
Not Applicable
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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