DiodesZetex ZXMP10A13F Type P-Channel MOSFET, 700 mA, 100 V Enhancement, 3-Pin SOT-23
- RS stock no.:
- 922-7936
- Mfr. Part No.:
- ZXMP10A13FTA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 10 725,00
(exc. VAT)
R 12 333,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 60,000 unit(s) ready to ship from another location
- Plus 18,000 unit(s) shipping from 07 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 3.575 | R 10,725.00 |
| 6000 - 9000 | R 3.486 | R 10,458.00 |
| 12000 - 27000 | R 3.381 | R 10,143.00 |
| 30000 + | R 3.246 | R 9,738.00 |
*price indicative
- RS stock no.:
- 922-7936
- Mfr. Part No.:
- ZXMP10A13FTA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 700mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | ZXMP10A13F | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 806mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.95V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 3.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 700mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series ZXMP10A13F | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 806mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.95V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 3.05mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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