onsemi TF412ST5G N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin SOT-883
- RS stock no.:
- 867-3287
- Mfr. Part No.:
- TF412ST5G
- Manufacturer:
- onsemi
Image representative of range
Subtotal (1 pack of 50 units)*
R 222,50
(exc. VAT)
R 256,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 5,200 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 + | R 4.45 | R 222.50 |
*price indicative
- RS stock no.:
- 867-3287
- Mfr. Part No.:
- TF412ST5G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Idss Drain-Source Cut-off Current | 1.2 to 3mA | |
| Maximum Drain Source Voltage | 30 V | |
| Maximum Drain Gate Voltage | -30V | |
| Transistor Configuration | Single | |
| Configuration | Single | |
| Mounting Type | Surface Mount | |
| Package Type | SOT-883 | |
| Pin Count | 3 | |
| Drain Gate On-Capacitance | 4pF | |
| Source Gate On-Capacitance | 4pF | |
| Dimensions | 1.08 x 0.68 x 0.41mm | |
| Maximum Power Dissipation | 100 mW | |
| Length | 1.08mm | |
| Height | 0.41mm | |
| Width | 0.68mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Idss Drain-Source Cut-off Current 1.2 to 3mA | ||
Maximum Drain Source Voltage 30 V | ||
Maximum Drain Gate Voltage -30V | ||
Transistor Configuration Single | ||
Configuration Single | ||
Mounting Type Surface Mount | ||
Package Type SOT-883 | ||
Pin Count 3 | ||
Drain Gate On-Capacitance 4pF | ||
Source Gate On-Capacitance 4pF | ||
Dimensions 1.08 x 0.68 x 0.41mm | ||
Maximum Power Dissipation 100 mW | ||
Length 1.08mm | ||
Height 0.41mm | ||
Width 0.68mm | ||
Maximum Operating Temperature +150 °C | ||
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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