Toshiba 2SK209-Y(TE85L,F), Single N-Channel JFET-Channel JFET, 10 V 1.2 to 3 mA, 3-Pin SOT-346
- RS stock no.:
- 760-3126
- Mfr. Part No.:
- 2SK209-Y(TE85L,F)
- Manufacturer:
- Toshiba
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 53,94
(exc. VAT)
R 62,03
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 40 unit(s) ready to ship from another location
- Plus 2,470 unit(s) shipping from 22 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 5.394 | R 53.94 |
| 50 - 90 | R 5.259 | R 52.59 |
| 100 - 240 | R 5.101 | R 51.01 |
| 250 - 490 | R 4.897 | R 48.97 |
| 500 + | R 4.701 | R 47.01 |
*price indicative
- RS stock no.:
- 760-3126
- Mfr. Part No.:
- 2SK209-Y(TE85L,F)
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Sub Type | JFET | |
| Product Type | JFET | |
| Channel Type | N | |
| Maximum Drain Source Voltage Vds | 10V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-346 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Drain Source Resistance Rds | 1kΩ | |
| Pin Count | 3 | |
| Drain Source Current Ids | 1.2 to 3 mA | |
| Maximum Power Dissipation Pd | 150mW | |
| Maximum Gate Source Voltage Vgs | -30V | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.1mm | |
| Length | 2.9mm | |
| Width | 1.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Sub Type JFET | ||
Product Type JFET | ||
Channel Type N | ||
Maximum Drain Source Voltage Vds 10V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-346 | ||
Minimum Operating Temperature -55°C | ||
Maximum Drain Source Resistance Rds 1kΩ | ||
Pin Count 3 | ||
Drain Source Current Ids 1.2 to 3 mA | ||
Maximum Power Dissipation Pd 150mW | ||
Maximum Gate Source Voltage Vgs -30V | ||
Maximum Operating Temperature 125°C | ||
Height 1.1mm | ||
Length 2.9mm | ||
Width 1.5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Related links
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