Toshiba 2SK208-R(TE85L,F), Single N-Channel JFET-Channel JFET, 10 V 0.3 to 0.75 mA, 3-Pin SOT-346
- RS stock no.:
- 760-3123
- Mfr. Part No.:
- 2SK208-R(TE85L,F)
- Manufacturer:
- Toshiba
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 67,07
(exc. VAT)
R 77,13
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 230 unit(s) ready to ship from another location
- Plus 2,280 unit(s) shipping from 22 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 6.707 | R 67.07 |
| 50 - 90 | R 6.539 | R 65.39 |
| 100 - 240 | R 6.343 | R 63.43 |
| 250 - 490 | R 6.089 | R 60.89 |
| 500 + | R 5.845 | R 58.45 |
*price indicative
- RS stock no.:
- 760-3123
- Mfr. Part No.:
- 2SK208-R(TE85L,F)
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Sub Type | JFET | |
| Product Type | JFET | |
| Maximum Drain Source Voltage Vds | 10V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-346 | |
| Drain Source Current Ids | 0.3 to 0.75 mA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Drain Source Resistance Rds | 100kΩ | |
| Pin Count | 3 | |
| Maximum Power Dissipation Pd | 100mW | |
| Maximum Gate Source Voltage Vgs | -30V | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.1mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Width | 1.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Sub Type JFET | ||
Product Type JFET | ||
Maximum Drain Source Voltage Vds 10V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-346 | ||
Drain Source Current Ids 0.3 to 0.75 mA | ||
Minimum Operating Temperature -55°C | ||
Maximum Drain Source Resistance Rds 100kΩ | ||
Pin Count 3 | ||
Maximum Power Dissipation Pd 100mW | ||
Maximum Gate Source Voltage Vgs -30V | ||
Maximum Operating Temperature 125°C | ||
Height 1.1mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Width 1.5mm | ||
Automotive Standard No | ||
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.