Toshiba 2SK208-R(TE85L,F), Single Type N-Channel JFET-Channel JFET, 10 V 0.3 to 0.75 mA, 3-Pin SOT-346
- RS stock no.:
- 760-3123
- Mfr. Part No.:
- 2SK208-R(TE85L,F)
- Manufacturer:
- Toshiba
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 67,98
(exc. VAT)
R 78,18
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 6.798 | R 67.98 |
| 50 - 90 | R 6.628 | R 66.28 |
| 100 - 240 | R 6.429 | R 64.29 |
| 250 - 490 | R 6.172 | R 61.72 |
| 500 + | R 5.925 | R 59.25 |
*price indicative
- RS stock no.:
- 760-3123
- Mfr. Part No.:
- 2SK208-R(TE85L,F)
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Sub Type | JFET | |
| Channel Type | Type N | |
| Product Type | JFET | |
| Maximum Drain Source Voltage Vds | 10V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-346 | |
| Maximum Drain Source Resistance Rds | 100kΩ | |
| Pin Count | 3 | |
| Drain Source Current Ids | 0.3 to 0.75 mA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100mW | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Sub Type JFET | ||
Channel Type Type N | ||
Product Type JFET | ||
Maximum Drain Source Voltage Vds 10V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-346 | ||
Maximum Drain Source Resistance Rds 100kΩ | ||
Pin Count 3 | ||
Drain Source Current Ids 0.3 to 0.75 mA | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100mW | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.