Toshiba 2SK2145-BL(TE85L,F), Junction Type Type N-Channel Transistor, 10 V 14 mA, 5-Pin SMV
- RS stock no.:
- 236-3558
- Mfr. Part No.:
- 2SK2145-BL(TE85L,F)
- Manufacturer:
- Toshiba
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 25 units)*
R 267,575
(exc. VAT)
R 307,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,925 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 10.703 | R 267.58 |
| 50 - 75 | R 10.435 | R 260.88 |
| 100 - 225 | R 10.122 | R 253.05 |
| 250 - 975 | R 9.717 | R 242.93 |
| 1000 + | R 9.328 | R 233.20 |
*price indicative
- RS stock no.:
- 236-3558
- Mfr. Part No.:
- 2SK2145-BL(TE85L,F)
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | Transistor | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 10V | |
| Configuration | Junction Type | |
| Package Type | SMV | |
| Minimum Operating Temperature | -55°C | |
| Drain Source Current Ids | 14 mA | |
| Pin Count | 5 | |
| Maximum Gate Source Voltage Vgs | -50 V | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Operating Temperature | 125°C | |
| Series | 2SK2145 | |
| Standards/Approvals | RoHS, JEITA, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type Transistor | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 10V | ||
Configuration Junction Type | ||
Package Type SMV | ||
Minimum Operating Temperature -55°C | ||
Drain Source Current Ids 14 mA | ||
Pin Count 5 | ||
Maximum Gate Source Voltage Vgs -50 V | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Operating Temperature 125°C | ||
Series 2SK2145 | ||
Standards/Approvals RoHS, JEITA, JEDEC | ||
Automotive Standard No | ||
The Toshiba field effect transistor MADE up of the silicon material and having N channel junction type. It is mainly used in audio frequency low noise amplifier applications.
Low noise
High input impedance
Related links
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