Toshiba 2SK2145-BL(TE85L,F), Junction Type Type N-Channel Transistor, 10 V 14 mA, 5-Pin SMV
- RS stock no.:
- 236-3558
- Mfr. Part No.:
- 2SK2145-BL(TE85L,F)
- Manufacturer:
- Toshiba
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 266,70
(exc. VAT)
R 306,70
(inc. VAT)
Add 150 units to get free delivery
In Stock
- 2,075 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 10.668 | R 266.70 |
| 50 - 75 | R 10.401 | R 260.03 |
| 100 - 225 | R 10.089 | R 252.23 |
| 250 - 975 | R 9.685 | R 242.13 |
| 1000 + | R 9.298 | R 232.45 |
*price indicative
- RS stock no.:
- 236-3558
- Mfr. Part No.:
- 2SK2145-BL(TE85L,F)
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | Transistor | |
| Maximum Drain Source Voltage Vds | 10V | |
| Configuration | Junction Type | |
| Package Type | SMV | |
| Maximum Gate Source Voltage Vgs | -50 V | |
| Maximum Power Dissipation Pd | 300mW | |
| Drain Source Current Ids | 14 mA | |
| Pin Count | 5 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS, JEITA, JEDEC | |
| Series | 2SK2145 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type Transistor | ||
Maximum Drain Source Voltage Vds 10V | ||
Configuration Junction Type | ||
Package Type SMV | ||
Maximum Gate Source Voltage Vgs -50 V | ||
Maximum Power Dissipation Pd 300mW | ||
Drain Source Current Ids 14 mA | ||
Pin Count 5 | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS, JEITA, JEDEC | ||
Series 2SK2145 | ||
Automotive Standard No | ||
The Toshiba field effect transistor MADE up of the silicon material and having N channel junction type. It is mainly used in audio frequency low noise amplifier applications.
Low noise
High input impedance
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