Toshiba GT30J341,Q(O IGBT, 59 A 600 V, 3-Pin TO-3P, Through Hole
- RS stock no.:
- 891-2734P
- Mfr. Part No.:
- GT30J341,Q(O
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal 5 units (supplied in a tube)*
R 471,55
(exc. VAT)
R 542,30
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 5 - 24 | R 94.31 |
| 25 - 49 | R 90.54 |
| 50 - 99 | R 86.92 |
| 100 + | R 83.44 |
*price indicative
- RS stock no.:
- 891-2734P
- Mfr. Part No.:
- GT30J341,Q(O
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Maximum Continuous Collector Current | 59 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 230 W | |
| Package Type | TO-3P | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 0.4µs | |
| Transistor Configuration | Single | |
| Dimensions | 15.5 x 4.5 x 20mm | |
| Energy Rating | 0.8mJ | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 2900pF | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Maximum Continuous Collector Current 59 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 230 W | ||
Package Type TO-3P | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 0.4µs | ||
Transistor Configuration Single | ||
Dimensions 15.5 x 4.5 x 20mm | ||
Energy Rating 0.8mJ | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 2900pF | ||
- COO (Country of Origin):
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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