Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P, Through Hole

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Subtotal 5 units (supplied in a bag)*

R 365,75

(exc. VAT)

R 420,60

(inc. VAT)

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Units
Per unit
5 - 24R 73.15
25 - 49R 70.96
50 - 99R 68.12
100 +R 65.40

*price indicative

Packaging Options:
RS stock no.:
891-2746P
Mfr. Part No.:
GT40WR21,Q(O
Manufacturer:
Toshiba
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Brand

Toshiba

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

1800 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

375 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1.8MHz

Transistor Configuration

Single

Dimensions

15.5 x 4.5 x 20mm

Maximum Operating Temperature

175 °C

Gate Capacitance

4500pF

COO (Country of Origin):
JP

IGBT Discretes, Toshiba



IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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