Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

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R 124,41

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R 143,07

(inc. VAT)

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Per unit
1 - 9R 124.41
10 - 49R 121.30
50 - 124R 117.66
125 - 249R 112.95
250 +R 108.43

*price indicative

Packaging Options:
RS stock no.:
796-5064
Mfr. Part No.:
GT50JR22
Manufacturer:
Toshiba
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Brand

Toshiba

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

230 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.5 x 4.5 x 20mm

Maximum Operating Temperature

+175 °C

IGBT Discretes, Toshiba



IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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