Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
- RS stock no.:
- 796-5064
- Mfr. Part No.:
- GT50JR22
- Manufacturer:
- Toshiba
View all IGBTs
50 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Price (Excl VAT) Each
R 88.43
(exc. VAT)
R 101.69
(inc. VAT)
| units | Per unit |
| 1 - 9 | R 88.43 |
| 10 - 49 | R 86.22 |
| 50 - 124 | R 83.63 |
| 125 - 249 | R 80.28 |
| 250 + | R 77.07 |
Packaging Options:
- RS stock no.:
- 796-5064
- Mfr. Part No.:
- GT50JR22
- Manufacturer:
- Toshiba
Legislation and Compliance
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
| Attribute | Value |
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 230 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.5 x 4.5 x 20mm |
| Maximum Operating Temperature | +175 °C |
50 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Price (Excl VAT) Each
R 88.43
(exc. VAT)
R 101.69
(inc. VAT)
| units | Per unit |
| 1 - 9 | R 88.43 |
| 10 - 49 | R 86.22 |
| 50 - 124 | R 83.63 |
| 125 - 249 | R 80.28 |
| 250 + | R 77.07 |
Packaging Options: