STMicroelectronics STGW40H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

R 1 718,40

(exc. VAT)

R 1 976,10

(inc. VAT)

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  • 30 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
30 - 120R 57.28R 1,718.40
150 - 270R 55.848R 1,675.44
300 - 720R 54.172R 1,625.16
750 - 1470R 52.005R 1,560.15
1500 +R 49.925R 1,497.75

*price indicative

RS stock no.:
168-7094
Mfr. Part No.:
STGW40H65DFB
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

283 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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