STMicroelectronics STGFW30V60DF, Type N-Channel Trench Gate Field Stop IGBT, 60 A 600 V, 3-Pin TO-3PF, Through Hole
- RS stock no.:
- 792-5779
- Mfr. Part No.:
- STGFW30V60DF
- Manufacturer:
- STMicroelectronics
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View bulk pricing optionSubtotal (1 pack of 2 units)*
R 133,19
(exc. VAT)
R 153,168
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 20 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 24 | R 66.595 | R 133.19 |
| 26 - 98 | R 64.93 | R 129.86 |
| 100 - 248 | R 62.98 | R 125.96 |
| 250 - 498 | R 60.46 | R 120.92 |
| 500 + | R 58.04 | R 116.08 |
*price indicative
- RS stock no.:
- 792-5779
- Mfr. Part No.:
- STGFW30V60DF
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Trench Gate Field Stop IGBT | |
| Maximum Continuous Collector Current Ic | 60A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | ECOPACK | |
| Height | 26.7mm | |
| Length | 15.7mm | |
| Series | V | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Trench Gate Field Stop IGBT | ||
Maximum Continuous Collector Current Ic 60A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals ECOPACK | ||
Height 26.7mm | ||
Length 15.7mm | ||
Series V | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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