STMicroelectronics STGFW30V60DF IGBT, 60 A 600 V, 3-Pin TO-3PF, Through Hole

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Subtotal (1 pack of 2 units)*

R 136,67

(exc. VAT)

R 157,17

(inc. VAT)

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Per Pack*
2 - 24R 68.335R 136.67
26 - 98R 66.625R 133.25
100 - 248R 64.625R 129.25
250 - 498R 62.04R 124.08
500 +R 59.56R 119.12

*price indicative

Packaging Options:
RS stock no.:
792-5779
Mfr. Part No.:
STGFW30V60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

58 W

Package Type

TO-3PF

Mounting Type

Through Hole

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.7 x 5.7 x 26.7mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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