STMicroelectronics STGD5H60DF, Type N-Channel Trench Gate Field Stop IGBT, 10 A 600 V, 3-Pin TO-252, Surface

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Subtotal (1 pack of 10 units)*

R 149,21

(exc. VAT)

R 171,59

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 14.921R 149.21
20 - 40R 14.548R 145.48
50 - 90R 14.112R 141.12
100 - 190R 13.548R 135.48
200 +R 13.006R 130.06

*price indicative

Packaging Options:
RS stock no.:
906-2798
Mfr. Part No.:
STGD5H60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

10A

Product Type

Trench Gate Field Stop IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

88W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.95V

Maximum Operating Temperature

175°C

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Series

H

Standards/Approvals

RoHS

Automotive Standard

No

Energy Rating

221mJ

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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