onsemi FGH40N60SFDTU IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 124-1334
- Mfr. Part No.:
- FGH40N60SFDTU
- Manufacturer:
- onsemi
30 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Tube of 30)
R 76,469
(exc. VAT)
R 87,939
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 - 30 | R 76,469 | R 2 294,07 |
| 60 - 120 | R 74,557 | R 2 236,71 |
| 150 - 270 | R 72,321 | R 2 169,63 |
| 300 - 570 | R 69,428 | R 2 082,84 |
| 600 + | R 66,651 | R 1 999,53 |
| *price indicative | ||
- RS stock no.:
- 124-1334
- Mfr. Part No.:
- FGH40N60SFDTU
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 290 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.6 x 4.7 x 20.6mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
- RS stock no.:
- 124-1334
- Mfr. Part No.:
- FGH40N60SFDTU
- Manufacturer:
- onsemi