onsemi NGTB35N65FL2WG, Type N-Channel IGBT-Field Stop II, 70 A 650 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 842-7898
- Mfr. Part No.:
- NGTB35N65FL2WG
- Manufacturer:
- onsemi
Image representative of range
Subtotal (1 pack of 2 units)*
R 227,77
(exc. VAT)
R 261,936
(inc. VAT)
Add 14 units to get free delivery
Temporarily out of stock
- 22 unit(s) shipping from 25 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 + | R 113.885 | R 227.77 |
*price indicative
- RS stock no.:
- 842-7898
- Mfr. Part No.:
- NGTB35N65FL2WG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 70A | |
| Product Type | IGBT-Field Stop II | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 300W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | Field Stop | |
| Length | 20.8mm | |
| Height | 5.3mm | |
| Width | 16.25 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 70A | ||
Product Type IGBT-Field Stop II | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 300W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series Field Stop | ||
Length 20.8mm | ||
Height 5.3mm | ||
Width 16.25 mm | ||
Automotive Standard No | ||
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- onsemi NGTB35N65FL2WG IGBT 3-Pin TO-247, Through Hole
- onsemi NGTG35N65FL2WG IGBT 3-Pin TO-247, Through Hole
- Infineon IKWH70N65WR6XKSA1 Single IGBT 3-Pin TO-247-3-HCC, Through Hole
- ROHM RGTH80TS65DGC11 IGBT 3-Pin TO-247N, Through Hole
- IXYS IXYH40N120C3 IGBT 3-Pin TO-247, Through Hole
- onsemi FGHL50T65SQ IGBT 3-Pin TO-247, Through Hole
- Fairchild FGH75T65UPD_F085 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW40N65H5FKSA1 IGBT 3-Pin TO-247, Through Hole