Fuji Electric FGW40N120VD IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

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Bulk discount available

Subtotal 5 units (supplied in a tube)*

R 1 153,40

(exc. VAT)

R 1 326,40

(inc. VAT)

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Units
Per unit
5 - 14R 230.68
15 - 29R 221.46
30 - 59R 212.60
60 +R 204.09

*price indicative

Packaging Options:
RS stock no.:
772-9051P
Mfr. Part No.:
FGW40N120VD
Manufacturer:
Fuji Electric

IGBT Discretes, Fuji Electric



IGBT Discretes & Modules, Fuji Electric


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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