Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole
- RS stock no.:
- 110-9135
- Mfr. Part No.:
- 7MBR50VB-120-50
- Manufacturer:
- Fuji Electric
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 1 476,97
(exc. VAT)
R 1 698,52
(inc. VAT)
FREE delivery for orders over R 1,500.00
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 1 - 1 | R 1,476.97 |
| 2 - 4 | R 1,440.05 |
| 5 - 9 | R 1,396.85 |
| 10 - 19 | R 1,340.98 |
| 20 + | R 1,287.34 |
*price indicative
- RS stock no.:
- 110-9135
- Mfr. Part No.:
- 7MBR50VB-120-50
- Manufacturer:
- Fuji Electric
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Fuji Electric | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 280 W | |
| Package Type | M712 | |
| Configuration | 3 Phase Bridge | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 24 | |
| Transistor Configuration | 3 Phase | |
| Dimensions | 122 x 62 x 17mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand Fuji Electric | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 280 W | ||
Package Type M712 | ||
Configuration 3 Phase Bridge | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 24 | ||
Transistor Configuration 3 Phase | ||
Dimensions 122 x 62 x 17mm | ||
Maximum Operating Temperature +150 °C | ||
IGBT Modules 7-Pack, Fuji Electric
V-Series
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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