onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 124-1446
- Mfr. Part No.:
- FGH40T120SMD
- Manufacturer:
- onsemi
420 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Tube of 30)
R 126,873
(exc. VAT)
R 145,904
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 - 30 | R 126,873 | R 3 806,19 |
| 60 - 120 | R 123,702 | R 3 711,06 |
| 150 - 270 | R 119,991 | R 3 599,73 |
| 300 - 570 | R 115,191 | R 3 455,73 |
| 600 + | R 110,583 | R 3 317,49 |
| *price indicative | ||
- RS stock no.:
- 124-1446
- Mfr. Part No.:
- FGH40T120SMD
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 555 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.87 x 4.82 x 20.82mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |
- RS stock no.:
- 124-1446
- Mfr. Part No.:
- FGH40T120SMD
- Manufacturer:
- onsemi