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onsemi, Type N-Channel IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

RS stock no.:: 124-1446
Mfr. Part No.:: FGH40T120SMD
Manufacturer:: onsemi

onsemi, Type N-Channel IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

Image representative of range

Bulk discount available

Subtotal (1 tube of 30 units)*

R 2 837,07

(exc. VAT)

R 3 262,62

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Tube*
30 - 30	R 94.569	R 2,837.07
60 - 120	R 92.204	R 2,766.12
150 - 270	R 89.438	R 2,683.14
300 - 570	R 85.861	R 2,575.83
600 +	R 82.426	R 2,472.78

*price indicative

RS stock no.:: 124-1446
Mfr. Part No.:: FGH40T120SMD
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	40A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	555W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	1.8V
	Maximum Gate Emitter Voltage VGEO	±25 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Series	Field Stop
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type IGBT
	Maximum Continuous Collector Current Ic 40A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 555W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 1.8V
	Maximum Gate Emitter Voltage VGEO ±25 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Series Field Stop
	Automotive Standard No

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

onsemi, Type N-Channel IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

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