Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7
- RS stock no.:
- 258-3757
- Mfr. Part No.:
- IMBG120R350M1HXTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
R 93,34
(exc. VAT)
R 107,34
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 654 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | R 93.34 |
| 10 - 99 | R 91.01 |
| 100 - 249 | R 88.28 |
| 250 - 499 | R 84.75 |
| 500 + | R 81.36 |
*price indicative
- RS stock no.:
- 258-3757
- Mfr. Part No.:
- IMBG120R350M1HXTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Package Type | PG-TO263-7 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Package Type PG-TO263-7 | ||
The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
Related links
- Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7
- Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKP15N65H5XKSA1 IGBT Transistor Module, 30 A 650 V PG-TO220-3
- Infineon IKW50N65SS5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3
- Infineon IKP10N60TXKSA1 IGBT Transistor Module, 24 A 600 V PG-TO-220-3
- Infineon IGP50N60TXKSA1 IGBT Transistor Module, 90 A 600 V PG-TO220-3
- Infineon IKW50N65H5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3