Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7
- RS stock no.:
- 258-3756
- Mfr. Part No.:
- IMBG120R350M1HXTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 reel of 1000 units)*
R 40 532,00
(exc. VAT)
R 46 612,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | R 40.532 | R 40,532.00 |
| 2000 - 2000 | R 39.519 | R 39,519.00 |
| 3000 + | R 38.333 | R 38,333.00 |
*price indicative
- RS stock no.:
- 258-3756
- Mfr. Part No.:
- IMBG120R350M1HXTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
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Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Package Type | PG-TO263-7 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Package Type PG-TO263-7 | ||
The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
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