onsemi NXH300B100H4Q2F2PG IGBT Module 1000 V Q2BOOST-PIM53, Surface

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Subtotal (1 unit)*

R 4 604,00

(exc. VAT)

R 5 294,60

(inc. VAT)

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Units
Per unit
1 - 1R 4,604.00
2 - 3R 4,488.90
4 - 7R 4,354.23
8 - 11R 4,180.06
12 +R 4,012.86

*price indicative

Packaging Options:
RS stock no.:
245-6969
Mfr. Part No.:
NXH300B100H4Q2F2PG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1000V

Maximum Power Dissipation Pd

79W

Number of Transistors

6

Package Type

Q2BOOST-PIM53

Mount Type

Surface

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Series

NXH300B100H4Q2F2PG

Length

93.1mm

Width

47.3 mm

Standards/Approvals

RoHS

Height

17.7mm

Automotive Standard

No

The ON Semiconductor Q2BOOST Module is a high−density, integrated power module combines high performance IGBTs with 1200 V SiC diode.

Extremely Efficient Trench with field stop technology

Low switching loss reduces system power dissipation

Module design offers high power density

Low inductive layout

3 channel in Q2BOOST package

These are Pb free device

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