Infineon IKP28N65ES5XKSA1 IGBT Single Transistor IC, 28 A 650 V TO-220
- RS stock no.:
- 242-0980
- Mfr. Part No.:
- IKP28N65ES5XKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 106,93
(exc. VAT)
R 122,97
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 466 unit(s) shipping from 18 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 53.465 | R 106.93 |
| 10 - 98 | R 52.13 | R 104.26 |
| 100 - 248 | R 50.565 | R 101.13 |
| 250 - 498 | R 48.54 | R 97.08 |
| 500 + | R 46.60 | R 93.20 |
*price indicative
- RS stock no.:
- 242-0980
- Mfr. Part No.:
- IKP28N65ES5XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 28A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 130W | |
| Package Type | TO-220 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | 5th Generation | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 28A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 130W | ||
Package Type TO-220 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Series 5th Generation | ||
Automotive Standard No | ||
The Infineon 650 V, 28 A IGBT with anti-parallel diode in TO-220 package.It has a high current density, high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
High speed smooth switching device for hard & soft switching
175°C maximum junction temperature
No need for gate clamping components
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