Infineon IHW30N65R5XKSA1 IGBT, 60 A 650 V, 3-Pin PG-TO247-3
- RS stock no.:
- 215-6637
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
R 1 167,90
(exc. VAT)
R 1 343,10
(inc. VAT)
Add 60 units to get free delivery
In Stock
- 240 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | R 38.93 | R 1,167.90 |
| 90 - 120 | R 37.957 | R 1,138.71 |
| 150 + | R 36.818 | R 1,104.54 |
*price indicative
- RS stock no.:
- 215-6637
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 176 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 176 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon resonant switching series reverse conducting insulated-gate bipolar transistor with monolithic body diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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